An integrated circuit contains a planar first transistor and a diode. The diode is connected between a first source/drain region of the first transistor and a gate electrode of the first transistor such that a charge is impeded from discharging from the gate electrode to the first source/drain region. A diode layer that is part of the diode is disposed on a portion of the first source/drain region. A conductive structure that is an additional part of the diode is disposed above a portion of the gate electrode and is disposed on the diode layer. The diode can be configured as a tunnel diode. The diode layer can be produced by thermal oxidation. Only one mask is required for producing the diode. A capacitor can be disposed above the diode. The first capacitor electrode of the capacitor is connected to the conductive structure.