Invention Grant
- Patent Title: Schottky diode on a silicon carbide substrate
- Patent Title (中): 肖特基二极管在碳化硅衬底上
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Application No.: US09747781Application Date: 2000-12-22
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Publication No.: US06576973B2Publication Date: 2003-06-10
- Inventor: Emmanuel Collard , André Lhorte
- Applicant: Emmanuel Collard , André Lhorte
- Priority: FR9916490 19991224
- Main IPC: H01L29872
- IPC: H01L29872

Abstract:
A vertical Schottky diode including an N-type silicon carbide layer of low doping level formed by epitaxy on a silicon carbide substrate of high doping level. The periphery of the active area of the diode is coated with a P-type epitaxial silicon carbide layer. A trench crosses the P-type epitaxial layer and penetrates into at least a portion of the height of the N-type epitaxial layer beyond the periphery of the active area. The doping level of the P-type epitaxial layer is chosen so that, for the maximum voltage that the diode is likely to be subjected to, the equipotential surfaces corresponding to approximately ¼ to ¾ of the maximum voltage extend up to the trench.
Public/Granted literature
- US20010054715A1 Schottky diode on a silicon carbide substrate Public/Granted day:2001-12-27
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