发明授权
- 专利标题： Semiconductor laser, and manufacturing method thereof, semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体激光器及其制造方法，半导体器件及其制造方法
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申请号： US09552498申请日： 2000-04-19
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公开(公告)号： US06577662B1公开(公告)日： 2003-06-10
- 发明人: Takeharu Asano , Masao Ikeda , Tsuyoshi Tojo , Shigetaka Tomiya
- 申请人： Takeharu Asano , Masao Ikeda , Tsuyoshi Tojo , Shigetaka Tomiya
- 优先权： JP11-116804 19990423
- 主分类号： H01S522
- IPC分类号： H01S522
摘要：
In a semiconductor laser having a ridge-shaped stripe and made of nitride III-V compound semiconductors, opposite sides of the ridge are buried with a buried semiconductor layer of AlxGa1-xAs (0
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