- 专利标题: Method for depositing a two-layer diffusion barrier
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申请号: US09992977申请日: 2001-11-19
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公开(公告)号: US06579786B2公开(公告)日: 2003-06-17
- 发明人: Sven Schmidbauer , Alexander Ruf
- 申请人: Sven Schmidbauer , Alexander Ruf
- 优先权: DE19922557 19990517
- 主分类号: H01L2120
- IPC分类号: H01L2120
摘要:
A method for depositing a two-layer diffusion barrier on a semiconductor wafer consisting of a TaN layer and a Ta layer serving as a carrier layer for copper interconnects. The TaN layer is inventively deposited at temperatures above 200° C. in a first step, and the Ta layer is deposited in a second step while cooling the semiconductor wafer to a temperature below 50° C.
公开/授权文献
- US20020086527A1 Method for depositing a two-layer diffusion barrier 公开/授权日:2002-07-04