发明授权
- 专利标题： Thin-film circuit substrate and method of producing same
- 专利标题（中）： 薄膜电路基板及其制造方法
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申请号： US09973530申请日： 2001-10-09
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公开(公告)号： US06580143B2公开(公告)日： 2003-06-17
- 发明人: Koji Yoshida , Makoto Tose
- 申请人： Koji Yoshida , Makoto Tose
- 优先权： JP2000-308949 20001010
- 主分类号： H01L2900
- IPC分类号： H01L2900
摘要：
A surface modification layer having a surface modification coefficient of 0.1 to 0.5 is formed on the surface of an organic insulating film on a substrate. A metal wiring is provided on the surface of the organic insulating film having the surface modification layer formed at the surface thereof. Thus, the bonding strength between the metal wiring and the organic insulating film is enhanced. The surface modification coefficient is defined by the formula: SMC = the total number of functional groups the total number of C atoms present at the surface of the organic insulating film . ( 1 )
公开/授权文献
- US20020090831A1 Thin-film circuit substrate and method of producing same 公开/授权日：2002-07-11
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