发明授权
- 专利标题: Semiconductor device having built-in capacitors
- 专利标题(中): 具有内置电容器的半导体器件
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申请号: US09805576申请日: 2001-03-14
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公开(公告)号: US06580147B2公开(公告)日: 2003-06-17
- 发明人: Toru Kimura , Dai Nakajima , Tatsuya Okuda , Takeshi Ohi , Takanobu Yoshida , Naoki Yoshimatsu , Yuuji Kuramoto , Toshinori Yamane , Masakazu Fukada , Majumdar Gourab
- 申请人: Toru Kimura , Dai Nakajima , Tatsuya Okuda , Takeshi Ohi , Takanobu Yoshida , Naoki Yoshimatsu , Yuuji Kuramoto , Toshinori Yamane , Masakazu Fukada , Majumdar Gourab
- 优先权: JP2000-069770 20000314
- 主分类号: H01L2900
- IPC分类号: H01L2900
摘要:
P-electrode 30a and N-electrode 31a of a semiconductor device 2, and capacitors 10 in a plate-like shape or a block-like shape respectively connected to U-phase 40, V-phase 41, and W-phase 42 having a switching element 20 and a diode 21 are built in a semiconductor device 2, and a single or a plurality of capacitors 10 are respectively connected to P-electrodes 30a and N-electrodes 31a in each of the phases, whereby the smoothing capacitors are built in the semiconductor device to reduce wiring inductances, the capacitors are miniaturized, and an entire electric power converting device, i.e. inverter, is miniaturized.
公开/授权文献
- US20010035562A1 Semiconductor device 公开/授权日:2001-11-01