发明授权
US06583033B2 Method of fabricating a distributed Bragg reflector by controlling material composition using molecular beam epitaxy
失效
通过使用分子束外延控制材料成分制造分布式布拉格反射器的方法
- 专利标题： Method of fabricating a distributed Bragg reflector by controlling material composition using molecular beam epitaxy
- 专利标题（中）： 通过使用分子束外延控制材料成分制造分布式布拉格反射器的方法
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申请号： US09934789申请日： 2001-08-21
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公开(公告)号： US06583033B2公开(公告)日： 2003-06-24
- 发明人: Eric M. Hall , Guilhem Almuneau
- 申请人： Eric M. Hall , Guilhem Almuneau
- 主分类号： H01L2120
- IPC分类号： H01L2120
摘要：
A distributed Bragg reflector for a vertical cavity surface emitting laser has a semiconductor material system including the elements aluminum, gallium, arsenic, and antimony. Accurate control of the composition of the semiconductor material system must be maintained to result in a distributed Bragg reflector suitable for use in a VCSEL. A method of fabricating the distributed Bragg reflector includes calibrating the incorporation of at least one of the elements into the material system as different semiconductor materials are grown on a substrate.
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