- 专利标题: Nitride based transistors on semi-insulating silicon carbide substrates
-
申请号: US09821360申请日: 2001-03-29
-
公开(公告)号: US06583454B2公开(公告)日: 2003-06-24
- 发明人: Scott Thomas Sheppard , Scott Thomas Allen , John Williams Palmour
- 申请人: Scott Thomas Sheppard , Scott Thomas Allen , John Williams Palmour
- 主分类号: H01L310328
- IPC分类号: H01L310328
摘要:
A high electron mobility transistor (HEMT) is disclosed that includes a semi-insulating silicon carbide substrate, an aluminum nitride buffer layer on the substrate, an insulating gallium nitride layer on the buffer layer, an active structure of aluminum gallium nitride on the gallium nitride layer, a passivation layer on the aluminum gallium nitride active structure, and respective source, drain and gate contacts to the aluminum gallium nitride active structure.