发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US09622837申请日： 2000-08-24
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公开(公告)号： US06583506B1公开(公告)日： 2003-06-24
- 发明人: Takakazu Yano , Shigeru Morokawa , Takashi Masuda , Makoto Watanabe , Masayoshi Kikuchi
- 申请人： Takakazu Yano , Shigeru Morokawa , Takashi Masuda , Makoto Watanabe , Masayoshi Kikuchi
- 优先权： JP10-043140 19980225; JP10-280747 19981002
- 主分类号： H01L2348
- IPC分类号： H01L2348
摘要：
A bump of a semiconductor device is made up of an aluminum layer formed by sputtering. The height of the projecting terminal is sufficiently higher than those of the other parts, and the uppermost surface of the bump is covered with a conductive film preventing oxidation of films, such as a transparent conductive film.
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