An unwanted tungsten film deposit on a Chemical Vapor Deposition chamber is cleaned by adding a mixture of at least two cleaning gases into the chamber at a predetermined temperature and pressure and in contact with said chamber walls for a sufficient length of time. The cleaning gases and reacted tungsten species are removed from the chamber by vacuum, and unreacted cleaning gases are removed by purging the chamber with an inert gas. At least one cleaning gas is selected from the group consisting of bromomethane, dibromomethane, bromoform and mixtures thereof. The temperature of the chamber is preferably at least about 300 degrees Celsius. The cleaning gases in the chamber are at a pressure in the range from about 100 to 200 Torr and the chamber is purged at a pressure in the range from about 200 to 500 Torr.