发明授权
- 专利标题: Transistor insulator layer incorporating superfine ceramic particles
- 专利标题(中): 晶体管绝缘体层结合超细陶瓷颗粒
-
申请号: US09619302申请日: 2000-07-19
-
公开(公告)号: US06586791B1公开(公告)日: 2003-07-01
- 发明人: Tzu-Chen Lee , Nelson B. O'Bryan
- 申请人: Tzu-Chen Lee , Nelson B. O'Bryan
- 主分类号: H01L2976
- IPC分类号: H01L2976
摘要:
An insulating layer in a field effect transistor is formed of superfine ceramic particles dispersed in a polymeric matrix. The characteristics of the insulating layer can be changed by varying the mix of ceramic particles and matrix components. Appropriate selection of components can provide a high dielectric constant material which is not subject to pinholes, has a high voltage breakdown and is chemically resistant. The material can be applied at relatively low processing temperatures, using a wide range of coating techniques, and is highly suited for use with polymeric substrates.