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发明授权
US06586808B1 Semiconductor device having multi-work function gate electrode and multi-segment gate dielectric 有权
具有多功能栅极电极和多段栅极电介质的半导体器件

  • 专利标题： Semiconductor device having multi-work function gate electrode and multi-segment gate dielectric
  • 专利标题（中）： 具有多功能栅极电极和多段栅极电介质的半导体器件
  • 申请号： US10163696
    申请日： 2002-06-06
  • 公开(公告)号： US06586808B1
    公开(公告)日： 2003-07-01
  • 发明人: Qi Xiang , Witold P. Maszara , HaiHong Wang
  • 申请人： Qi Xiang , Witold P. Maszara , HaiHong Wang
  • 主分类号： H01L31119
  • IPC分类号： H01L31119
Semiconductor device having multi-work function gate electrode and multi-segment gate dielectric
摘要：
A MOSFET and methods of fabrication. The MOSFET includes a gate having a center gate electrode portion being spaced from the layer of semiconductor material by a center gate dielectric. The gate also includes a lateral gate electrode portion adjacent each sidewall of the center gate electrode portion. The lateral gate electrode portions are each spaced from the layer of semiconductor material by a lateral gate dielectric portion.
摘要（中）：

一种MOSFET及其制造方法。 MOSFET包括具有通过中心栅极电介质与半导体材料层间隔开的中心栅电极部分的栅极。 栅极还包括与中心栅电极部分的每个侧壁相邻的横向栅极电极部分。 横向栅极电极部分通过横向栅极电介质部分与半导体材料层间隔开。

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