发明授权
US06586819B2 Sapphire substrate, semiconductor device, electronic component, and crystal growing method
有权
蓝宝石基板，半导体器件，电子部件和晶体生长方法
- 专利标题： Sapphire substrate, semiconductor device, electronic component, and crystal growing method
- 专利标题（中）： 蓝宝石基板，半导体器件，电子部件和晶体生长方法
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申请号： US09927223申请日： 2001-08-10
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公开(公告)号： US06586819B2公开(公告)日： 2003-07-01
- 发明人: Takashi Matsuoka
- 申请人： Takashi Matsuoka
- 优先权： JP2000-245626 20000814
- 主分类号： H01L31036
- IPC分类号： H01L31036
摘要：
In a sapphire substrate having a heteroepitaxial growth surface, the heteroepitaxial growth surface is parallel to a plane obtained by rotating a (01{overscore (1)}0) plane of the sapphire substrate about a c-axis of the sapphire substrate through 8° to 20° in a crystal lattice of the sapphire substrate. A semiconductor device, electronic component, and crystal growing method are also disclosed.