发明授权
- 专利标题: Film bulk acoustic wave device
- 专利标题(中): 薄膜体声波装置
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申请号: US09892606申请日: 2001-06-28
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公开(公告)号: US06586861B2公开(公告)日: 2003-07-01
- 发明人: Koichiro Misu , Kenji Yoshida , Koji Ibata , Shusou Wadaka , Tsutomu Nagatsuka , Fusaoki Uchikawa , Akira Yamada , Chisako Maeda
- 申请人: Koichiro Misu , Kenji Yoshida , Koji Ibata , Shusou Wadaka , Tsutomu Nagatsuka , Fusaoki Uchikawa , Akira Yamada , Chisako Maeda
- 优先权: JP11-321594 19991111
- 主分类号: H01L41047
- IPC分类号: H01L41047
摘要:
There is provided a film bulk acoustic wave device comprising: a silicon substrate 1, a dielectric film 21 including a silicon nitride 16 formed on the substrate 1 and a silicon oxide 2 on the silicon nitride 16, a bottom electrode 3 formed on the dielectric film 21, a piezoelectric film 17 formed on the bottom electrode 3, and a top electrode 5 formed on the piezoelectric film 17, wherein a via hole is formed in such a manner that the thickness direction of a part of the silicon substrate 1 which is opposite to a region including a part where the top electrode 5 exists is removed from the bottom surface of the silicon substrate 1 to a boundary surface with the silicon nitride 16.
公开/授权文献
- US20010045793A1 Film bulk acoustic wave device 公开/授权日:2001-11-29