发明授权
- 专利标题： Low dielectric constant materials and their production and use
- 专利标题（中）： 低介电常数材料及其生产和使用
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申请号： US09424583申请日： 1999-11-24
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公开(公告)号： US06589644B1公开(公告)日： 2003-07-08
- 发明人: Noriko Yamada , Toru Takahashi , Tadashi Sakon , Yoichi Matsuzaki , Atsushi Nogami , Shingo Katayama , Ikuko Shiina
- 申请人： Noriko Yamada , Toru Takahashi , Tadashi Sakon , Yoichi Matsuzaki , Atsushi Nogami , Shingo Katayama , Ikuko Shiina
- 优先权： JP9-138690 19970528; JP9-177261 19970702; JP9-239747 19970904; JP10-009550 19980121
- 主分类号： B32B326
- IPC分类号： B32B326
摘要：
Silica-based low dielectric constant materials having three-dimensional network structures containing siloxane backbones which comprise SiO4 tetrahedron structural units, as well as their production and use. The materials can be applied as interlayer dielectrics for semiconductor elements and the like.
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