There is provided a method of making a dual inlaid via in a first layer. The first layer may be a polymer intermetal dielectric, such as HSQ, of a semiconductor device. The method includes forming a first opening, such as a via, in the first layer and forming a bilayer resist in the first opening. The bilayer resist includes an imaging layer above a bottom antireflective coating (BARC). The imaging layer is selectively exposed to radiation such that no radiation reaches the lower section of the BARC in the first opening through the upper section of the BARC. The bilayer resist is pattered, and a second opening, such as a trench, is formed in communication with the first opening using the patterned bilayer resist as a mask.