- 专利标题: Process of using siloxane dielectric films in the integration of organic dielectric films in electronic devices
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申请号: US10076783申请日: 2002-02-13
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公开(公告)号: US06589862B2公开(公告)日: 2003-07-08
- 发明人: Shi-Qing Wang , Jude Dunne , Lisa Figge
- 申请人: Shi-Qing Wang , Jude Dunne , Lisa Figge
- 主分类号: H01L214763
- IPC分类号: H01L214763
摘要:
The invention relates to cured dielectric films and a process for their manufacture which are useful in the production of integrated circuits. Dual layered dielectric films are produced in which a lower layer comprises a non-silicon containing organic polymer and an upper layer comprises an organic, silicon containing polymer. Such films are useful in the manufacture of microelectronic devices such as integrated circuits (IC's). In one aspect the upper layer silicon containing polymer has less than 40 Mole percent carbon containing substituents, and in another aspect it has at least approximately 40 Mole percent carbon containing substituents.