Method of fabricating a contact structure having a composite barrier layer between a platinum layer and a polysilicon plug

发明授权

US06589867B2 Method of fabricating a contact structure having a composite barrier layer between a platinum layer and a polysilicon plug 有权

标题翻译：制造在铂层和多晶硅插塞之间具有复合阻挡层的接触结构的方法

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专利标题： Method of fabricating a contact structure having a composite barrier layer between a platinum layer and a polysilicon plug
专利标题（中）： 制造在铂层和多晶硅插塞之间具有复合阻挡层的接触结构的方法
申请号： US09944436

申请日： 2001-08-31
公开(公告)号： US06589867B2

公开(公告)日： 2003-07-08
发明人: Paul J. Schuele , Pierre C. Fazan
申请人： Paul J. Schuele , Pierre C. Fazan
主分类号： H01L214763
IPC分类号： H01L214763

Method of fabricating a contact structure having a composite barrier layer between a platinum layer and a polysilicon plug

摘要：

This invention is a process for forming an effective titanium nitride barrier layer between the upper surface of a polysilicon plug formed in a thick dielectric layer and a platinum lower capacitor plate in a dynamic random access memory which is being fabricated on a silicon wafer.

摘要（中）：

本发明是一种在制造在硅晶片上的动态随机存取存储器中，在形成于厚电介质层的多晶硅插塞的上表面和铂下电容器板之间形成有效的氮化钛阻挡层的工艺。

公开/授权文献

US20020004299A1 Method of fabricating a contract structure having a composite barrier layer between a platinium layer and a polysilicon plug 公开/授权日：2002-01-10

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