发明授权
US06589875B1 Method of selectively processing wafer edge regions to increase wafer uniformity, and system for accomplishing same
有权
选择性地处理晶片边缘区域以增加晶片均匀性的方法，以及用于实现晶片边缘区域的系统
- 专利标题： Method of selectively processing wafer edge regions to increase wafer uniformity, and system for accomplishing same
- 专利标题（中）： 选择性地处理晶片边缘区域以增加晶片均匀性的方法，以及用于实现晶片边缘区域的系统
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申请号： US09920997申请日： 2001-08-02
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公开(公告)号： US06589875B1公开(公告)日： 2003-07-08
- 发明人: Christopher A. Bode , Alexander J. Pasadyn
- 申请人： Christopher A. Bode , Alexander J. Pasadyn
- 主分类号： H01L21311
- IPC分类号： H01L21311
摘要：
In one illustrative embodiment, the method includes providing a wafer including at least one non-production area, forming a process layer above the wafer, forming a masking layer above the process layer, the masking layer being patterned so as to expose a portion of the process layer formed above the at least one non-production area, and performing a process operation on the exposed portion of the process layer formed above the at least one non-production area. In another aspect, the present invention is directed to a system that includes a controller for identifying at least one non-production area of a wafer, a photolithography tool for forming a masking layer above the process layer, the masking layer being patterned so as to expose a portion of the process layer formed above the at least one non-production area, and an etch tool for performing an etching process on the exposed portion of the process layer formed above the at least one non-production area.