Invention Grant
- Patent Title: Land grid array semiconductor device
- Patent Title (中): 陆格阵列半导体器件
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Application No.: US09983127Application Date: 2001-10-23
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Publication No.: US06590286B2Publication Date: 2003-07-08
- Inventor: Makio Okada , Yasushi Kasatani , Tomoaki Hashimoto
- Applicant: Makio Okada , Yasushi Kasatani , Tomoaki Hashimoto
- Priority: JP2001-120717 20010419
- Main IPC: H01L2348
- IPC: H01L2348

Abstract:
A land grid array semiconductor device provides greater positioning accuracy for an external electrode with respect to a mounting substrate. External electrodes are arranged on one surface of a substrate in area array. The external electrode includes an external electrode pad and an external electrode interconnection. Each external electrode pad includes a first pad layer having a cylindrical shape and a second pad layer covering the surface of the first pad layer and having a conical shape.
Public/Granted literature
- US20020153608A1 Land grid array semiconductor device and method of mounting land grid array semiconductor devices Public/Granted day:2002-10-24
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