发明授权
- 专利标题： Real time parameter monitoring apparatus for high voltage chamber in semiconductor wafer processing system
- 专利标题（中）： 半导体晶圆处理系统高压室实时参数监控装置
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申请号： US09996586申请日： 2001-11-30
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公开(公告)号： US06590378B2公开(公告)日： 2003-07-08
- 发明人: Sang-Mun Chon , Gyeong-Su Keum , Hyung-Sik Hong
- 申请人： Sang-Mun Chon , Gyeong-Su Keum , Hyung-Sik Hong
- 优先权： KR2000-73012 20001204
- 主分类号： G01R3100
- IPC分类号： G01R3100
摘要：
A parameter monitoring apparatus for a high voltage chamber in a semiconductor wafer processing system monitors parameters in the high voltage chamber in real time by converting an electrical signal generated from the high voltage chamber into an optical signal using an electro-optical converter. The optical signal is then converted back into an electrical signal again by an opto-electrical converter. The parameters can be monitored in real time without damaging measurement devices, since they are not influenced by the potential difference between the high voltage chamber and the measurement device.
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