- 专利标题: Voltage boosting circuit for an integrated circuit device
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申请号: US09877811申请日: 2001-10-11
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公开(公告)号: US06590442B2公开(公告)日: 2003-07-08
- 发明人: Dae-Seok Byeon , Young-Ho Lim
- 申请人: Dae-Seok Byeon , Young-Ho Lim
- 优先权: KR2000-69982 20001123
- 主分类号: G05F324
- IPC分类号: G05F324
摘要:
A voltage boosting circuit for an integrated circuit includes a booster and a voltage clamp circuit. The booster generates a boosted voltage higher than the supply voltage in response to a boosting control signal. The voltage clamp circuit includes a voltage detector, a pulse generator, and a discharge circuit. The voltage detector generates, in response to the boosting control signal, a detected voltage signal representing an attribute of the boosted voltage. The pulse generator generates a pulse signal responsive to the detected voltage signal. And the discharge circuit discharges the boosted voltage during an activation period of the pulse signal. This largely stabilizes the output voltage of the booster.