发明授权
US06593210B1 Self-aligned/maskless reverse etch process using an inorganic film
有权
使用无机膜的自对准/无掩模反向蚀刻工艺
- 专利标题： Self-aligned/maskless reverse etch process using an inorganic film
- 专利标题（中）： 使用无机膜的自对准/无掩模反向蚀刻工艺
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申请号： US09707214申请日： 2000-11-06
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公开(公告)号： US06593210B1公开(公告)日： 2003-07-15
- 发明人: Bharath Rangarajan , Bhanwar Singh , Ursula Q. Quinto
- 申请人： Bharath Rangarajan , Bhanwar Singh , Ursula Q. Quinto
- 主分类号： H01L2176
- IPC分类号： H01L2176
摘要：
One aspect of the present invention relates to a method of forming trench isolation regions within a semiconductor substrate, involving the steps of forming trenches in the semiconductor substrate; depositing a semi-conformal dielectric material over the substrate, wherein the semi-conformal dielectric material has valleys positioned over the trenches; forming an inorganic conformal film over the semi-conformal dielectric material; polishing the semiconductor substrate whereby a first portion of the inorganic conformal film is removed thereby exposing a portion of the semi-conformal dielectric material, and a second portion remains over the valleys of the semi-conformal dielectric material; removing the exposed portions of the semi-conformal dielectric material; and planarizing the substrate to provide the semiconductor substrate having trenches with a dielectric material therein.
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