Invention Grant
- Patent Title: Method of fabricating a patterned metal-containing layer on a semiconductor wafer
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Application No.: US10122936Application Date: 2002-04-12
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Publication No.: US06593228B2Publication Date: 2003-07-15
- Inventor: Volker Weinrich , Gerhard Beitel , Andreas Hauser , Peter Bosk
- Applicant: Volker Weinrich , Gerhard Beitel , Andreas Hauser , Peter Bosk
- Priority: DE10118422 20010412
- Main IPC: H01L214763
- IPC: H01L214763

Abstract:
A metal-containing layer is formed on a substrate. A mask layer is formed on the metal-containing layer. The mask layer is patterned by way of a lithographically fabricated mask. The metal-containing layer is patterned with the patterned mask layer, to thereby form an electrode out of the metal-containing layer. A protective layer is deposited on the mask layer and on the substrate. The protective layer undergoes chemical mechanical polishing, during which the protective layer is removed and the electrode is uncovered.
Public/Granted literature
- US20020160596A1 Method of fabricating a patterned metal-containing layer on a semiconductor wafer Public/Granted day:2002-10-31
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