发明授权
- 专利标题: Onset layer for thin film disk with CoPtCrB alloy
- 专利标题(中): CoPtCrB合金薄膜盘起始层
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申请号: US09758690申请日: 2001-01-09
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公开(公告)号: US06596409B2公开(公告)日: 2003-07-22
- 发明人: Xiaoping Bian , Mary Frances Doerner , Tim Minvielle , Mohammad Taghi Mirzamaani , Kai Tang
- 申请人: Xiaoping Bian , Mary Frances Doerner , Tim Minvielle , Mohammad Taghi Mirzamaani , Kai Tang
- 主分类号: G11B565
- IPC分类号: G11B565
摘要:
The thin film disk includes a pre-seed layer of amorphous or nanocrystalline structure which may be CrTa or AlTi or AlTa, and that is deposited upon a disk substrate. The pre-seed layer is followed by the RuAl seed layer, a Cr alloy underlayer, an onset layer composed essentially of CoCr and a magnetic layer. The onset layer has an optimal concentration of 28-33 at. % Cr and an optimal thickness of 0.5 to 2.5 nm and it increases coercivity and improves the Signal-to-Noise Ratio (SNR) of the disk.
公开/授权文献
- US20010016272A1 Onset layer for thin film disk with CoPtCrB alloy 公开/授权日:2001-08-23
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