Invention Grant
- Patent Title: Method for preparing bismuth-based high temperature superconductors
- Patent Title (中): 制备铋基高温超导体的方法
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Application No.: US09916175Application Date: 2001-07-26
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Publication No.: US06599862B2Publication Date: 2003-07-29
- Inventor: Sergey Lee , Setsuko Tajima
- Applicant: Sergey Lee , Setsuko Tajima
- Priority: JP2000-231379 20000727
- Main IPC: C04B10100
- IPC: C04B10100

Abstract:
The invention provides a method for stably preparing a bismuth-based high temperature superconductor of a Bi-2223 single-phase or a Bi/Pb-2223 single phase, wherein a second phase is not allowed to reside, at a low cost and efficiently. With the method described above, mixed powders of raw materials (mixed powders of oxides and carbonates), obtained by mixing the raw materials such that a mixing ratio of constituents, Bi:Sr:Ca:Cu or (Bi, Pb):Sr:Ca:Cu, becomes identical to the stoichiometric ratio of a crystal of the superconductor Bi2Sr2Ca2Cu3Oz, or (Bi, Pb) 2Sr2Ca2Cu3Oz, respectively, are used as raw material for sintering, and the sintering is applied thereto, using KCl as a flux. In this case, the raw material for the sintering as calcinated is preferably used, and the sintering is preferably applied at a sintering temperature kept at a constant level.
Public/Granted literature
- US20020022577A1 Method for preparing bismuth-based high temperature superconductors Public/Granted day:2002-02-21
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