A semiconductor memory device capable of reading out data at a higher speed and occupying a decreased chip-area is provided. The device includes a bit line selection circuit including a plurality of first transistors for selecting a plurality of bit lines according to a plurality of column selection signals generated based on address signals, a bit line charging circuit including a plurality of second transistors for charging the plurality of bit lines, respectively, and a bit line grounding circuit including a plurality of third transistors for connecting the plurality of bit lines with a ground potential. This enables the decrease in a charging time during a bit line precharging operation and a discharging time during data reading-out operation. Further, by grounding adjacent bit lines that are not involved in a precharging or reading-out operation so that they have a ground potential, it is also possible to minimize bit line intervals without causing a malfunction due to an increase in capacitances between the bit lines.