发明授权
US06602754B1 Nitrogen implant into nitride spacer to reduce nickel silicide formation on spacer
有权
氮注入到氮化物间隔物中以减少间隔物上的硅化镍形成
- 专利标题： Nitrogen implant into nitride spacer to reduce nickel silicide formation on spacer
- 专利标题（中）： 氮注入到氮化物间隔物中以减少间隔物上的硅化镍形成
-
申请号： US10059039申请日： 2002-01-30
-
公开(公告)号： US06602754B1公开(公告)日： 2003-08-05
- 发明人: George J. Kluth , Minh Van Ngo , Paul R. Besser
- 申请人： George J. Kluth , Minh Van Ngo , Paul R. Besser
- 主分类号： H01L21336
- IPC分类号： H01L21336
摘要：
Bridging between silicide layers on a gate electrode and source/drain regions along silicon nitride sidewall spacers is prevented by implanting the exposed surfaces of the silicon nitride sidewall spacers with nitrogen to create a surface region having an increased nitrogen concentration. Embodiments include implanting the silicon nitride sidewall spacers with nitrogen such that the nitrogen concentration of the exposed surface is increased by about 5% to about 15%, thereby substantially preventing the formation of metal silicide on the sidewall spacers.