发明授权
- 专利标题: Semiconductor device and its manufacture
- 专利标题(中): 半导体器件及其制造
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申请号: US09735477申请日: 2000-12-14
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公开(公告)号: US06602756B2公开(公告)日: 2003-08-05
- 发明人: Jun Lin , Hiroshi Minakata , Akihiro Shimada , Toshiya Suzuki , Daisuke Matsunaga
- 申请人: Jun Lin , Hiroshi Minakata , Akihiro Shimada , Toshiya Suzuki , Daisuke Matsunaga
- 优先权: JP2000-243930 20000811
- 主分类号: H01L2120
- IPC分类号: H01L2120
摘要:
A method of manufacturing a semiconductor device has the steps of: (a) forming a lower electrode made of rare metal above a semiconductor substrate; (b) depositing a capacitor dielectric film made of a high dielectric material or ferroelectric oxide on the lower electrode; (c) forming a laminated layer on the capacitor dielectric film, the laminated layer including an upper electrode layer made of rare metal and an adhesive layer with or without an SiO2 mask layer thereon; (d) patterning the laminated layer; (e) chemically processing the patterned, laminated layer to remove a surface layer of the laminated layer; and (f) forming an interlayer insulating film over the semiconductor substrate, covering the chemically processed, laminated layer. An adhesion force between the rare metal layer and insulating layer can be increased.
公开/授权文献
- US20020019107A1 Semiconductor device and its manufacture 公开/授权日:2002-02-14