发明授权
- 专利标题： Vertical type MOSFET
- 专利标题（中）： 垂直型MOSFET
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申请号： US09391236申请日： 1999-09-07
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公开(公告)号： US06603173B1公开(公告)日： 2003-08-05
- 发明人: Yoshifumi Okabe , Yoshihiko Ozeki , Shigeki Takahashi , Norihito Tokura
- 申请人： Yoshifumi Okabe , Yoshihiko Ozeki , Shigeki Takahashi , Norihito Tokura
- 优先权： JP3-187602 19910726; JP6-62448 19940331; JP10-269961 19980924
- 主分类号： H01L2976
- IPC分类号： H01L2976
摘要：
A vertical power MOSFET, which can improve a surge withstand voltage and a surge withstand voltage against a surge voltage from an inductance load L. The vertical power MOSFET has a plurality of unit cells. The unit cell is formed from a MOSFET that uses a p-type base layer at a sidewall of a rectangular U-groove as a channel portion. Each of the p-type base layer of each unit cell is connected each others Accordingly, it can restrain an impurity concentration of a corner portion (a portion positioned at a corner) of the rectangular p-type base layer from being decreased. Therefore, it can reduce the difference in distance from the end portion of the p-type base layer to the end portion of the depletion layer. As a result, it can improve the surge withstand voltage when a surge voltage is input from an inductance load L.
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