发明授权
- 专利标题: Double heterostructure photodiode with graded minority-carrier blocking structures
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申请号: US09774480申请日: 2001-01-30
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公开(公告)号: US06603184B2公开(公告)日: 2003-08-05
- 发明人: Chih-Hsiang Lin , Jeffery L. Johnson , Klaus Alexander Anselm
- 申请人: Chih-Hsiang Lin , Jeffery L. Johnson , Klaus Alexander Anselm
- 主分类号: H01L31075
- IPC分类号: H01L31075
摘要:
An embodiment of a radiation detector includes a semiconductor-based blocking structure interposed between the detector's absorption region and at least one of its contact structures. The blocking structure is adapted to prevent minority carriers generated within the adjacent contact structure from reaching the absorption region, and may also prevent minority carriers generated within the absorption region near the contact structure from entering the contact structure. Majority carriers, on the other hand, may be substantially unimpeded by the blocking structure in moving from the absorption region to the contact structure. In an embodiment, the blocking structure has a higher effective energy gap than its adjacent contact structure and than the absorption region. The interface between the blocking structure and the absorption region may be graded, so that the effective energy gap decreases gradually between the blocking structure and the absorption region.
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