发明授权
- 专利标题： CVD plasma process to fill contact hole in damascene process
- 专利标题（中）： CVD等离子体工艺在镶嵌工艺中填充接触孔
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申请号： US09650538申请日： 2000-08-30
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公开(公告)号： US06605855B1公开(公告)日： 2003-08-12
- 发明人: Bhanwar Singh , Michael K. Templeton , Bharath Rangarajan , Christopher F. Lyons , Sanjay K. Yedur , Ramkumar Subramanian
- 申请人： Bhanwar Singh , Michael K. Templeton , Bharath Rangarajan , Christopher F. Lyons , Sanjay K. Yedur , Ramkumar Subramanian
- 主分类号： H01L2900
- IPC分类号： H01L2900
摘要：
The present invention relates to a method for fabricating interconnecting lines and vias in a layer of insulating material. A via is formed in the layer of insulating material. A protective material is formed so as to be conformal to at least edges and sidewalls of the via, the protective material facilitating shielding of at least the edges and sidewalls of the via from a trench etch step. The trench etch step is performed to form a trench opening in the insulating material. The via and trench are filled with a conductive metal.
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