发明授权
- 专利标题： Method for forming a Cu interconnect pattern
- 专利标题（中）： 形成Cu互连图案的方法
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申请号： US09656657申请日： 2000-09-07
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公开(公告)号： US06607981B1公开(公告)日： 2003-08-19
- 发明人: Hisaya Takahashi , Hirofumi Nakamura , Masanobu Izaki , Junichi Katayama
- 申请人： Hisaya Takahashi , Hirofumi Nakamura , Masanobu Izaki , Junichi Katayama
- 优先权： JP11-258477 19990913
- 主分类号： H01L2144
- IPC分类号： H01L2144
摘要：
A method for forming a Cu interconnect pattern on a ZnO film of a printed circuit board without using a metallic catalyst on the ZnO film includes the steps of replacing Zn in the ZnO film by Cu in an aqueous solution of copper sulfate to form a CuO film, reducing the CuO in the CuO film to Cu in an aqueous solution of hydrogenated boron potassium to form a metallic Cu film, and plating the metallic Cu film with a plating Cu film in a plating liquid. The absence of the metallic catalyst improves the insulation resistance of the Cu interconnect pattern in the printed circuit board.