A wirebonded semiconductor package structure that provides for high frequency operation, a large number of I/O terminals, controlled low impedance, compensated inductance, electromagnetic shielding against cross-talk and prevention of false signals from ground bounce includes a semiconductor device, a semiconductor package substrate and a wirebond(s) electrically connecting the semiconductor device to the semiconductor package substrate. The wirebonded semiconductor package structure also includes a first insulating encapsulant layer at least partially encapsulating the wirebond(s) and a conductor layer (e.g., a patterned gold conductor layer) disposed on the first insulating encapsulant layer and electrically connected to the semiconductor package substrate. A method for manufacturing such a wirebonded semiconductor package includes wirebonding a semiconductor device (i.e., a die) to a semiconductor package substrate to form a semiconductor package structure that includes the die, the semiconductor package substrate and a wirebond(s) electrically connecting the die to the semiconductor package substrate. A first insulating encapsulant layer is then applied that at least partially encapsulates the wirebond(s). A conductor layer (e.g., a gold conductor layer) is subsequently applied on the first insulating encapsulant layer such that the conductor layer is electrically connected to the semiconductor package substrate, thereby creating a wirebonded semiconductor package structure. Thereafter, the conductor layer is optionally patterned to form a patterned conductor layer that is electrically connected to the semiconductor package substrate.