发明授权
- 专利标题: Self-aligned polysilicon polish
- 专利标题(中): 自对准多晶硅抛光
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申请号: US10150204申请日: 2002-05-15
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公开(公告)号: US06610577B1公开(公告)日: 2003-08-26
- 发明人: Jack F. Thomas , Unsoon Kim , Krishnashree Achuthan
- 申请人: Jack F. Thomas , Unsoon Kim , Krishnashree Achuthan
- 主分类号: H01L218247
- IPC分类号: H01L218247
摘要:
A method for removing polysilicon from isolation regions on a substrate during semiconductor fabrication is disclosed. The method includes depositing a layer of polysilicon over the substrate, and depositing at least one dielectric layer over the polysilicon. The method further includes polishing the polysilicon from the isolation regions, wherein the dielectric layers act as a polishing stop, resulting in regions of polysilicon that are self-aligned to the trench isolation regions.