发明授权
US06613485B2 Optical proximity correction of pattern on photoresist through spacing of sub patterns
有权
通过子图案的间隔对光致抗蚀剂上的图案进行光学邻近校正
- 专利标题： Optical proximity correction of pattern on photoresist through spacing of sub patterns
- 专利标题（中）： 通过子图案的间隔对光致抗蚀剂上的图案进行光学邻近校正
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申请号： US10045432申请日： 2002-01-11
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公开(公告)号： US06613485B2公开(公告)日： 2003-09-02
- 发明人: Jui-Tsen Huang , Jiunn-Ren Hwang
- 申请人： Jui-Tsen Huang , Jiunn-Ren Hwang
- 主分类号： G03F900
- IPC分类号： G03F900
摘要：
An optical proximity correction method for rectifying pattern on photoresist. Line pattern of integrated circuit is divided into L-shape regions or T-shaped regions. The L-shaped or T-shaped regions are further dissected into rectangular patches. Area of each rectangular patch is suitably reduced and reproduced onto a photomask. The photomask is used to form a corrected photoresist pattern.
公开/授权文献
- US20020086225A1 Optical proximity correction of pattern on photoresist 公开/授权日：2002-07-04
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