A dual-polycide semiconductor structure and method for forming the same having reduced dopant cross-diffusion. A conductive layer is formed over a polysilicon layer having a first region doped with a first dopant and a second region adjoining the first region at an interface doped with a second dopant. A region of discontinuity is then formed in the conductive layer located away from the interface. The conductive layer formed over the polysilicon gate overlaps the interface to provide electrical continuity between the first and second regions of the polysilicon gate, but also includes a region of discontinuity to reduce dopant cross-diffusion.