发明授权
- 专利标题: Self-grown monopoly compact grit
- 专利标题(中): 自制垄断紧凑砂砾
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申请号: US09934459申请日: 2001-08-21
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公开(公告)号: US06616725B2公开(公告)日: 2003-09-09
- 发明人: Hyun Sam Cho , John Chen , Kyung Yul Han
- 申请人: Hyun Sam Cho , John Chen , Kyung Yul Han
- 主分类号: B24D300
- IPC分类号: B24D300
摘要:
A self-grown monopoly compact grit and high pressure, high temperature process for preparing the same. The high pressure, high temperature sintered/synthesized monopoly compact grit is used in various industrial tools such as saw blades, grinding wheels, cutting tools and drill bits. Further, the monopoly compact grit of the present invention is produced from a seed of a mono-crystal of diamond or cubic boron nitride surrounded by either a self-grown crystal layer or an integrally bonded poly-crystalline sintered compact layer. The self-grown crystal layer is a new grown crystal structure where the seed crystal grows into a new phase through a normal diamond or cubic boron nitride synthesis process in the presence of a catalyst metal solvent. The compact layer is composed of about 50 to about 90 volume percent of diamond or cubic boron nitride, a typical binder material, which is a catalyst for crystal-to-crystal bonding, and a cementing agent which is a binding agent capable of forming stable carbide and nitride bonds.
公开/授权文献
- US20030044613A1 Self-grown monopoly compact grit 公开/授权日:2003-03-06
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