发明授权
- 专利标题： Semiconductor device and method for manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US09609107申请日： 2000-06-30
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公开(公告)号： US06617226B1公开(公告)日： 2003-09-09
- 发明人: Kyoioni Suguro , Kiyotaka Miyano , Ichiro Mizushima , Yoshitaka Tsunashima , Takayuki Hiraoka , Yasushi Akasaka , Tsunetoshi Arikado
- 申请人： Kyoioni Suguro , Kiyotaka Miyano , Ichiro Mizushima , Yoshitaka Tsunashima , Takayuki Hiraoka , Yasushi Akasaka , Tsunetoshi Arikado
- 优先权： JP11-187053 19990630; JP11-263742 19990917
- 主分类号： H01L2120
- IPC分类号： H01L2120
摘要：
In using an epitaxial growth method to selectively grow on a silicon substrate an epitaxial layer on which an element is to be formed, the epitaxial layer is formed so as to extend upward above a thermal oxide film that is an element isolating insulating film, in order to prevent formation of facets. Subsequently, unwanted portions of the epitaxial layer are removed by means of CMP to complete an STI element isolating structure.