发明授权
- 专利标题: Semiconductor device and flat electrodes
- 专利标题(中): 半导体器件和扁平电极
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申请号: US10106491申请日: 2002-03-27
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公开(公告)号: US06617688B2公开(公告)日: 2003-09-09
- 发明人: Gorou Ikegami , Nobuaki Nagai
- 申请人: Gorou Ikegami , Nobuaki Nagai
- 优先权: JP2001-089614 20010327
- 主分类号: H01L2352
- IPC分类号: H01L2352
摘要:
A semiconductor device has a first semiconductor pellet and a second semiconductor pellet. An electrode-forming surface of the first semiconductor pellet on which flat electrodes having flat surfaces are formed and an electrode-forming surface of the second semiconductor pellet on which protruded electrodes are opposed to each other. Also, the flat electrodes and the protruded electrodes are electrically connected to each other. A main component of a conductive material that forms the flat electrode is the same as a main component of a conductive material that forms the protruded electrode. Furthermore, the hardness of the protruded electrode is higher than the hardness of the flat electrode. Therefore, the protruded electrodes and the flat electrodes can be electrically connected to each other with high reliability.