发明授权
- 专利标题： Way to remove Cu line damage after Cu CMP
- 专利标题（中）： Cu CMP后去除Cu线损伤的方法
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申请号： US10043780申请日： 2002-01-14
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公开(公告)号： US06620034B2公开(公告)日： 2003-09-16
- 发明人: Tsu Shih , Jih-Churng Jwu , Ying-Ho Chen , Syun-Ming Jang
- 申请人： Tsu Shih , Jih-Churng Jwu , Ying-Ho Chen , Syun-Ming Jang
- 主分类号： B24B100
- IPC分类号： B24B100
摘要：
The invention provides a method and an apparatus that prevent the accumulation of copper ions during CMP of copper lines by performing the CMP process at low temperatures and by maintaining this low temperature during the CMP process by adding a slurry that functions as a corrosion inhibitor.
公开/授权文献
- US20020064971A1 Novel way to remove Cu line damage after Cu CMP 公开/授权日：2002-05-30
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