发明授权
- 专利标题: Increased capacitance trench capacitor
- 专利标题(中): 增加电容沟槽电容
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申请号: US09682607申请日: 2001-09-26
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公开(公告)号: US06620675B2公开(公告)日: 2003-09-16
- 发明人: Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , William H. Ma
- 申请人: Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , William H. Ma
- 主分类号: H01L218242
- IPC分类号: H01L218242
摘要:
Disclosed is a method of increasing the capacitance of a trench capacitor by increasing sidewall area, comprising: forming a trench in a silicon substrate, the trench having a sidewall; forming islands on the sidewall of the trench; and etching pits into the sidewall using the islands as a mask. The capacitor is completed by forming a node insulator on the pits and the sidewall; and filling said trench with a trench conductor.
公开/授权文献
- US20030060005A1 Increased capacitance trench capacitor 公开/授权日:2003-03-27