发明授权
- 专利标题： Silicided undoped polysilicon for capacitor bottom plate
- 专利标题（中）： 用于电容器底板的硅化无掺杂多晶硅
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申请号： US10102416申请日： 2002-03-20
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公开(公告)号： US06620700B2公开(公告)日： 2003-09-16
- 发明人: Douglas A. Prinslow , F. Scott Johnson
- 申请人： Douglas A. Prinslow , F. Scott Johnson
- 主分类号： H01L218242
- IPC分类号： H01L218242
摘要：
A capacitor (110) having a bottom plate (104) that includes undoped polysilicon (106) which has been silicided (108). An advantage of the invention is providing a capacitor (110) having reduced parasitic capacitance to the substrate (100) and reduced sheet resistance of the bottom plate (104).
公开/授权文献
- US20020096738A1 Silicided undoped polysilicon for capacitor bottom plate 公开/授权日：2002-07-25
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