发明授权
- 专利标题: System for programming fuse structure by electromigration of silicide enhanced by creating temperature gradient
- 专利标题(中): 通过产生温度梯度增强硅化物电迁移来编程熔丝结构的系统
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申请号: US10247415申请日: 2002-09-19
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公开(公告)号: US06624499B2公开(公告)日: 2003-09-23
- 发明人: Chandrasekharan Kothandaraman , S. Sundar Kumar Iyer , Subramanian Iyer , Chandrasekhar Narayan
- 申请人: Chandrasekharan Kothandaraman , S. Sundar Kumar Iyer , Subramanian Iyer , Chandrasekhar Narayan
- 主分类号: H01L2900
- IPC分类号: H01L2900
摘要:
The present invention provides a system, apparatus and method of programming via electromigration. A semiconductor fuse which includes a cathode and an anode coupled by a fuse link having an electrically conductive component, such as silicide, is coupled to a power supply. A potential is applied across the conductive fuse link via the cathode and anode in which the potential is of a magnitude to initiate electromigration of silicide from a region of the semiconductor fuse reducing the conductivity of the fuse link. The electromigration is enhanced by effectuating a temperature gradient between the fuse link and one of the cathode and anode responsive to the applied potential. Portions of the semiconductor fuse are selectively cooled in a heat transfer relationship to increase the temperature gradient. In one embodiment, a heat sink is applied to the cathode. The heat sink can be a layer of metal coupled in close proximity to the cathode while insulated from the fuse link. In another embodiment, the temperature gradient is increased by selectively varying the thickness of the underlying oxide layer such that the cathode is disposed on a thinner layer of oxide than the fuse link.
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