发明授权
- 专利标题: Metal bridging monitor for etch and CMP endpoint detection
- 专利标题(中): 用于蚀刻和CMP端点检测的金属桥接监视器
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申请号: US10016252申请日: 2001-12-10
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公开(公告)号: US06624642B1公开(公告)日: 2003-09-23
- 发明人: Christopher F. Lyons , Ramkumar Subramanian , Steven C. Avanzino
- 申请人: Christopher F. Lyons , Ramkumar Subramanian , Steven C. Avanzino
- 主分类号: G01R2700
- IPC分类号: G01R2700
摘要:
Disclosed is a wafer containing a semiconductor substrate, at least one metal layer formed over the semiconductor substrate, and at least one electrical sensor embedded at least one of on and in the wafer to facilitate real time monitoring of the metal layer as it progresses through a subtractive metallization process. The system contains a wafer comprising at least one metal layer formed on a semiconductor substrate, at least one electrical sensor in contact with the wafer and operable to detect and transmit electrical activity associated with the wafer, and an electrical measurement station operable to process electrical activity detected and received from the electrical sensor for monitoring a subtractive metallization process in real-time.
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