发明授权
US06624642B1 Metal bridging monitor for etch and CMP endpoint detection 有权
用于蚀刻和CMP端点检测的金属桥接监视器

Metal bridging monitor for etch and CMP endpoint detection
摘要:
Disclosed is a wafer containing a semiconductor substrate, at least one metal layer formed over the semiconductor substrate, and at least one electrical sensor embedded at least one of on and in the wafer to facilitate real time monitoring of the metal layer as it progresses through a subtractive metallization process. The system contains a wafer comprising at least one metal layer formed on a semiconductor substrate, at least one electrical sensor in contact with the wafer and operable to detect and transmit electrical activity associated with the wafer, and an electrical measurement station operable to process electrical activity detected and received from the electrical sensor for monitoring a subtractive metallization process in real-time.
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