发明授权
- 专利标题： Semiconductor laser device having thickened impurity-doped aluminum-free optical waveguide layers
- 专利标题（中）： 具有增厚杂质掺杂的无铝光波导层的半导体激光器件
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申请号： US09648807申请日： 2000-08-28
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公开(公告)号： US06625190B1公开(公告)日： 2003-09-23
- 发明人: Toshiro Hayakawa , Toshiaki Fukunaga , Mitsugu Wada
- 申请人： Toshiro Hayakawa , Toshiaki Fukunaga , Mitsugu Wada
- 优先权： JP11/239119 19990826
- 主分类号： H01S319
- IPC分类号： H01S319
摘要：
In a semiconductor laser device including an active region which is made of an aluminum-free material and a plurality of cladding layers made of at least one AlGaAs or AlGaInP material, the active region includes a quantum well layer and at least one optical waveguide layer; a portion of the at least one optical waveguide layer located on one side of the quantum well layer has a thickness of 0.25 &mgr;m or more; and the at least one optical waveguide layer, other than a portion of the at least one optical waveguide layer being located near the quantum well layer and having a thickness of at least 10 nm, is doped with impurity of 1017 cm−3 or more.
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