A test method of a tester of a semiconductor memory device which includes recording a test pattern into the semiconductor memory device, reading the recorded test pattern to compare with a expected pattern, detecting information on a defect of the semiconductor memory device with a result of the comparison and interpreting the information on the defect of the semiconductor memory device, the method comprising the steps of: setting up minimum and maximum values relevant to a desired capacity of the semiconductor memory device to be tested; counting up from the preset minimum to the preset maximum values; generating a carry signal by comparing the preset maximum value with the counted value when the counted value gets to the preset maximum value; and resetting a value to be counted if the carry signal is generated, to thereby generate addresses of the semiconductor memory device, and a tester of the semiconductor memory device comprising: minimum and maximum address registering means for saving minimum and maximum address values relevant to a desired capacity of the semiconductor memory device to be tested; address counting means for increasingly counting from the minimum value to generate addresses; and carry signal generating means for generating carry signals, if the addresses output from the address counting means and a signal output from the maximum address registering means are the same, to thereby reset the address counting means, so that a user of the tester does not have to make a new test program, providing convenience in performing a test and improving reliability in results of the test.