发明授权
- 专利标题： Bi-layer floating gate for improved work function between floating gate and a high-K dielectric layer
- 专利标题（中）： 双层浮栅，用于改善浮栅和高K电介质层之间的功函数
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申请号： US10274063申请日： 2002-10-17
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公开(公告)号： US06630383B1公开(公告)日： 2003-10-07
- 发明人: Effiong Ibok , Wei Zheng , Nicholas H. Tripsas , Mark T. Ramsbey , Fred T K Cheung
- 申请人： Effiong Ibok , Wei Zheng , Nicholas H. Tripsas , Mark T. Ramsbey , Fred T K Cheung
- 主分类号： H01L21336
- IPC分类号： H01L21336
摘要：
In one embodiment, a method of making a gate stack semiconductor device is disclosed. The method comprises the steps of: forming a tunnel oxide layer over a p-type semiconductor substrate; forming a floating gate over the tunnel oxide layer by first forming an n-type polysilicon layer and subjecting the n-type polysilicon layer to nitridation, and then forming a p-type polysilicon layer over the nitridated n-type polysilicon layer; and forming a high-K insulating layer over the p-type polysilicon layer.
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