• Patent Title: Semiconductor structures with trench contacts
  • Application No.: US10187560
    Application Date: 2002-07-02
  • Publication No.: US06630711B2
    Publication Date: 2003-10-07
  • Inventor: Qin Huang
  • Applicant: Qin Huang
  • Main IPC: H01L2976
  • IPC: H01L2976
Semiconductor structures with trench contacts
Abstract:
Semiconductor structures such as the trench and planar MOSFETs (UMOS), trench and planar IGBTs and trench MCTs using trenches to establish a conductor. Improved control of the parasitic transistor in the trench MOSFET is also achieved and cell size and pitch is reduced relative to conventional structures.
Public/Granted literature
Information query
Patent Agency Ranking
0/0