Invention Grant

Abstract:
Semiconductor structures such as the trench and planar MOSFETs (UMOS), trench and planar IGBTs and trench MCTs using trenches to establish a conductor. Improved control of the parasitic transistor in the trench MOSFET is also achieved and cell size and pitch is reduced relative to conventional structures.
Public/Granted literature
- US20020195653A1 Semiconductor structures with trench contacts Public/Granted day:2002-12-26
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