发明授权
US06630720B1 Asymmetric semiconductor device having dual work function gate and method of fabrication
有权
具有双功函数栅极和制造方法的非对称半导体器件
- 专利标题： Asymmetric semiconductor device having dual work function gate and method of fabrication
- 专利标题（中）： 具有双功函数栅极和制造方法的非对称半导体器件
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申请号： US10036210申请日： 2001-12-26
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公开(公告)号： US06630720B1公开(公告)日： 2003-10-07
- 发明人: Witold P. Maszara , HaiHong Wang , Qi Xiang
- 申请人： Witold P. Maszara , HaiHong Wang , Qi Xiang
- 主分类号： H01L2976
- IPC分类号： H01L2976
摘要：
An asymmetric semiconductor device and a method of making a pair of the asymmetric devices. The semiconductor device includes a layer of semiconductor material having a source and a drain, and a dual work function gate disposed on the layer of semiconductor material to define a channel interposed between the source and the drain.